elektronische bauelemente SSG4953P -5.2 a, -30 v, r ds(on) 52 m ? dual p-ch enhancement mode power mosfet 15-jan-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature sop-8 surface mount package saves board space. ? high power and current handling capability.. ? extended v gs range ( 25) for battery pack applications. package information package mpq leadersize sop-8 2.5k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v t a = 25c -5.2 a continuous drain current 1 t a = 70c i d @ -4.2 a pulsed drain current 2 i dm -30 a continuous source current (diode conduction) 1 i s -1.6 a t a = 25c 2.1 w power dissipation 1 t a = 70c p d @ 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings junction to case (max.) 1 t Q 5 sec r jc 40 c / w junction to ambient (max.) 1 t Q 10 sec r ja 60 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. a h b m d c j k f l e n g s g g s d d d d
elektronische bauelemente SSG4953P -5.2 a, -30 v, r ds(on) 52 m ? dual p-ch enhancement mode power mosfet 15-jan-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage current i gss - - 100 na v ds = 0v, v gs = 25v - - -1 a v ds = -24v, v gs = 0v zero gate voltage drain current i dss - - -5 a v ds = -24v, v gs = 0v, t j =55c on-state drain current 1 i d(on) -30 - - a v ds = -5v, v gs = -10v - - 52 v gs = -10v, i d = -5.2a drain-source on-resistance 1 r ds(on) - - 89 m ? v gs = -4.5v, i d = -4.0a forward transconductance 1 g fs - 19 - s v ds = -15v, i d = -5.2a diode forward voltage v sd - -0.7 - v i s = -2.1a, v gs = 0v dynamic 2 total gate charge q g - 15 - gate-source charge q gs - 2.2 - gate-drain charge q gd - 1.7 - nc i d = -5.2a v ds = -15v v gs = -10v turn-on delay time t d(on) - 10 - rise time t r - 2.8 - turn-off delay time t d(off) - 53.6 - fall time t f - 46 - ns v dd = -15v i d = -1a v gen = -10v r l = 15 ? , r g = 6 ? notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSG4953P -5.2 a, -30 v, r ds(on) 52 m ? dual p-ch enhancement mode power mosfet 15-jan-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSG4953P -5.2 a, -30 v, r ds(on) 52 m ? dual p-ch enhancement mode power mosfet 15-jan-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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